Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

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Subtotal (1 pack of 10 units)*

R 443,18

(exc. VAT)

R 509,66

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 240R 44.318R 443.18
250 - 740R 43.21R 432.10
750 - 1190R 41.914R 419.14
1200 - 2490R 40.237R 402.37
2500 +R 38.628R 386.28

*price indicative

Packaging Options:
RS stock no.:
826-9204
Mfr. Part No.:
IPB600N25N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

175°C

Length

10.31mm

Height

4.57mm

Standards/Approvals

No

Width

9.45 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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