Infineon HEXFET Type N-Channel MOSFET, 129 A, 135 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

R 22 232,80

(exc. VAT)

R 25 568,00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +R 27.791R 22,232.80

*price indicative

RS stock no.:
168-5948
Mfr. Part No.:
IRF135S203
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

129A

Maximum Drain Source Voltage Vds

135V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

441W

Typical Gate Charge Qg @ Vgs

180nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.65mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
CN

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