Infineon HEXFET N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF

RS stock no.:: 165-5894
Mfr. Part No.:: IRF540NSTRLPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF

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Subtotal (800 units, on reels of 800)*

R 11 656,00

(exc. VAT)

R 13 408,00

(inc. VAT)

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In Stock

Plus 31,200 unit(s) shipping from 06 October 2026

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Units	Per unit	Per Reel*
800 +	R 14.57	R 11,656.00

*price indicative

RS stock no.:: 165-5894
Mfr. Part No.:: IRF540NSTRLPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	130W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	71nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Standards/Approvals	No
	Width	9.65mm
	Length	10.67mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 130W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 71nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Standards/Approvals No
	Width 9.65mm
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRLPBF

This high power MOSFET is designed for efficiency and reliability across a variety of applications. Featuring an N-channel configuration, it operates in enhancement mode with a maximum continuous drain current of 33A and a breakdown voltage of 100V. Its surface mount design allows for simple integration into printed circuit boards, enhancing versatility in modern applications.

Features & Benefits

• Low Rds(on) of 44mΩ improves circuit efficiency

• High power dissipation capability of 130W supports robust applications

• Fast switching speed minimises energy loss during operation

• Wide operating temperature range from -55°C to +175°C suits diverse environments

• Lead-free construction adheres to contemporary environmental standards

Applications

• Power management in automation systems

• High-efficiency power supplies for electronics

• Motor control in electrical engineering

• Renewable energy systems for effective energy conversion

What is the maximum gate-to-source voltage for this device?

The maximum gate-to-source voltage is ±20V, allowing for safe operation in typical circuits.

How does this device handle thermal management?

With a maximum power dissipation of 130W and a junction-to-case thermal resistance of 1.15°C/W, it effectively manages heat during operation.

What is the typical gate charge at 10V?

The typical gate charge at a gate-to-source voltage of 10V is 71 nC, ensuring quick response times in switching applications.

Can this device be mounted on standard PCBs?

Yes, it is designed in a D2PAK package, making it suitable for surface mount applications on standard PCB layouts.

What is the significance of the enhancement mode in this MOSFET?

The enhancement mode allows for greater control over the conduction state, providing improved performance in switching applications.