N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

RS stock no.:: 165-6089
Mfr. Part No.:: SIHF640L-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

Image representative of range

Price (Excl VAT) Each (In a Tube of 50)

R 20,793

(exc. VAT)

R 23,912

(inc. VAT)

On back order for despatch 2025/02/13*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Tube**
50 +	R 20,793	R 1 039,65

**price indicative

RS stock no.:: 165-6089
Mfr. Part No.:: SIHF640L-GE3
Manufacturer:: Vishay

IRF640S, IRF640L, SiHF640S, SiHF640L, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	I2PAK (TO-262)
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	130 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	4.83mm
Length	10.67mm
Height	11.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

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