Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3
- RS stock no.:
- 815-2635
- Mfr. Part No.:
- SIHF640L-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 374,27
(exc. VAT)
R 430,41
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 16 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 37.427 | R 374.27 |
| 100 - 240 | R 36.491 | R 364.91 |
| 250 - 490 | R 35.396 | R 353.96 |
| 500 - 990 | R 33.98 | R 339.80 |
| 1000 + | R 32.621 | R 326.21 |
*price indicative
- RS stock no.:
- 815-2635
- Mfr. Part No.:
- SIHF640L-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-262 | |
| Series | SiHF640L | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Height | 11.3mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-262 | ||
Series SiHF640L | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Height 11.3mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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