Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3

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Subtotal (1 pack of 10 units)*

R 368,68

(exc. VAT)

R 423,98

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 36.868R 368.68
100 - 240R 35.946R 359.46
250 - 490R 34.868R 348.68
500 - 990R 33.473R 334.73
1000 +R 32.134R 321.34

*price indicative

Packaging Options:
RS stock no.:
815-2635
Mfr. Part No.:
SIHF640L-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

SiHF640L

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

2V

Maximum Operating Temperature

150°C

Length

10.67mm

Height

11.3mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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