Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262 SIHF640L-GE3

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Subtotal (1 pack of 10 units)*

R 384,79

(exc. VAT)

R 442,51

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90R 38.479R 384.79
100 - 240R 37.517R 375.17
250 - 490R 36.391R 363.91
500 - 990R 34.935R 349.35
1000 +R 33.538R 335.38

*price indicative

Packaging Options:
RS stock no.:
815-2635
Mfr. Part No.:
SIHF640L-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

SiHF640L

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

130W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

11.3mm

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


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