Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

RS stock no.:: 151-3036
Mfr. Part No.:: PMXB65UPEZ
Manufacturer:: Nexperia

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

Image representative of range

Bulk discount available

Subtotal (1 reel of 5000 units)*

R 8 155,00

(exc. VAT)

R 9 380,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

10,000 unit(s) shipping from 06 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 - 5000	R 1.631	R 8,155.00
10000 - 20000	R 1.59	R 7,950.00
25000 +	R 1.542	R 7,710.00

*price indicative

RS stock no.:: 151-3036
Mfr. Part No.:: PMXB65UPEZ
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-3.2A
	Maximum Drain Source Voltage Vds	-12V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6.7nC
	Maximum Power Dissipation Pd	8.33W
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Width	1.05 mm
	Height	0.36mm
	Length	1.15mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -3.2A
	Maximum Drain Source Voltage Vds -12V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6.7nC
	Maximum Power Dissipation Pd 8.33W
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Width 1.05 mm
	Height 0.36mm
	Length 1.15mm
	Standards/Approvals No
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 59 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Nexperia Type P-Channel MOSFET, -3.2 A, -12 V Enhancement, 4-Pin DFN

FREE delivery for orders over R 1,500.00

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