N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3 Nexperia PMXB40UNEZ
- RS stock no.:
- 153-1958
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 25 units)**
R 52 60
(exc. VAT)
R 60 50
(inc. VAT)
5000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 25 - 100 | R 2,104 | R 52,60 |
| 125 - 1225 | R 2,052 | R 51,30 |
| 1250 - 2475 | R 1,99 | R 49,75 |
| 2500 - 3725 | R 1,91 | R 47,75 |
| 3750 + | R 1,834 | R 45,85 |
**price indicative
- RS stock no.:
- 153-1958
- Mfr. Part No.:
- PMXB40UNEZ
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | DFN1010D-3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 121 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 8.33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Number of Elements per Chip | 1 | |
| Length | 1.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
| Width | 1.05mm | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type DFN1010D-3 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 121 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 8.33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Number of Elements per Chip 1 | ||
Length 1.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Width 1.05mm | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
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