MPN

Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN

RS stock no.:: 153-0723
Mfr. Part No.:: PMXB75UPEZ
Manufacturer:: Nexperia

Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN

Image representative of range

Bulk discount available

Subtotal (1 reel of 5000 units)*

R 7 520,00

(exc. VAT)

R 8 650,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

5,000 unit(s) shipping from 12 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 - 5000	R 1.504	R 7,520.00
10000 - 20000	R 1.466	R 7,330.00
25000 +	R 1.423	R 7,115.00

*price indicative

RS stock no.:: 153-0723
Mfr. Part No.:: PMXB75UPEZ
Manufacturer:: Nexperia

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-2.9A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	950mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	8.33W
	Typical Gate Charge Qg @ Vgs	6.8nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Length	1.15mm
	Standards/Approvals	No
	Height	0.36mm
	Width	1.05 mm
	Automotive Standard	No

	Select all
	Brand Nexperia
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -2.9A
	Maximum Drain Source Voltage Vds -20V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 950mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 8.33W
	Typical Gate Charge Qg @ Vgs 6.8nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Length 1.15mm
	Standards/Approvals No
	Height 0.36mm
	Width 1.05 mm
	Automotive Standard No

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 69 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

High-side load switch and charging switch for portable devices

Power management in battery driven portables

LED driver

DC-to-DC converter

Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN

FREE delivery for orders over R 1,500.00

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