Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 120 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

R 2 358,40

(exc. VAT)

R 2 712,15

(inc. VAT)

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Units
Per unit
Per Tube*
50 +R 47.168R 2,358.40

*price indicative

RS stock no.:
145-9320
Mfr. Part No.:
IPP041N12N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

158nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

15.95mm

Standards/Approvals

No

Length

10.36mm

Width

4.57 mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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