N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS Toshiba TK20A25D,S5X(J
- RS stock no.:
- 144-5200
- Mfr. Part No.:
- TK20A25D,S5X(J
- Manufacturer:
- Toshiba
Subtotal (1 pack of 10 units)**
R 130 78
(exc. VAT)
R 150 40
(inc. VAT)
20 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
20 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 10 + | R 13,078 | R 130,78 |
**price indicative
- RS stock no.:
- 144-5200
- Mfr. Part No.:
- TK20A25D,S5X(J
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
| Length | 10mm | |
| Transistor Material | Si | |
| Width | 4.5mm | |
| Number of Elements per Chip | 1 | |
| Height | 15mm | |
| Forward Diode Voltage | 1.7V | |
Select all | ||
|---|---|---|
Manufacturer Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Length 10mm | ||
Transistor Material Si | ||
Width 4.5mm | ||
Number of Elements per Chip 1 | ||
Height 15mm | ||
Forward Diode Voltage 1.7V | ||