DiodesZetex Dual 2 Type P-Channel MOSFET, -4.5 A, 20 V Enhancement, 6-Pin DFN DMP2065UFDB-7
- RS stock no.:
- 133-3343
- Mfr. Part No.:
- DMP2065UFDB-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 124,50
(exc. VAT)
R 143,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,020 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 6.225 | R 124.50 |
| 100 - 480 | R 6.069 | R 121.38 |
| 500 - 980 | R 5.887 | R 117.74 |
| 1000 - 2980 | R 5.652 | R 113.04 |
| 3000 + | R 5.426 | R 108.52 |
*price indicative
- RS stock no.:
- 133-3343
- Mfr. Part No.:
- DMP2065UFDB-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.2nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -0.7V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Height | 0.56mm | |
| Length | 2mm | |
| Standards/Approvals | UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202 | |
| Width | 2 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.2nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -0.7V | ||
Maximum Power Dissipation Pd 1.5W | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Height 0.56mm | ||
Length 2mm | ||
Standards/Approvals UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202 | ||
Width 2 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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