DiodesZetex Dual 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 6-Pin UDFN DMP2075UFDB-7
- RS stock no.:
- 182-7162
- Mfr. Part No.:
- DMP2075UFDB-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 203,30
(exc. VAT)
R 233,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 4.066 | R 203.30 |
| 250 - 450 | R 3.964 | R 198.20 |
| 500 - 950 | R 3.845 | R 192.25 |
| 1000 - 1950 | R 3.691 | R 184.55 |
| 2000 + | R 3.544 | R 177.20 |
*price indicative
- RS stock no.:
- 182-7162
- Mfr. Part No.:
- DMP2075UFDB-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 137mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | |
| Width | 2.07 mm | |
| Height | 0.55mm | |
| Length | 2.07mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 137mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0 | ||
Width 2.07 mm | ||
Height 0.55mm | ||
Length 2.07mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
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