IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

R 609,36

(exc. VAT)

R 700,76

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 7 unit(s) ready to ship from another location
  • Plus 72 unit(s) shipping from 02 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1R 609.36
2 - 4R 594.13
5 - 9R 576.31
10 - 19R 553.26
20 +R 531.13

*price indicative

RS stock no.:
125-8043
Mfr. Part No.:
IXFN420N10T
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.07kW

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

670nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

25.07 mm

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links