IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 unit)*

R 591,21

(exc. VAT)

R 679,89

(inc. VAT)

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Units
Per unit
1 - 1R 591.21
2 - 4R 576.43
5 - 9R 559.14
10 - 19R 536.77
20 +R 515.30

*price indicative

RS stock no.:
125-8043
Mfr. Part No.:
IXFN420N10T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

670nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.07kW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

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