IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

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Subtotal (1 unit)*

R 601,19

(exc. VAT)

R 691,37

(inc. VAT)

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Units
Per unit
1 - 1R 601.19
2 - 4R 586.16
5 - 9R 568.58
10 - 19R 545.84
20 +R 524.01

*price indicative

RS stock no.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

525nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

830W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Width

25.07 mm

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

Distrelec Product Id

30253370

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