IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

Image representative of range

Bulk discount available

Subtotal (1 unit)*

R 1 041,27

(exc. VAT)

R 1 197,46

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 unit(s) ready to ship from another location
  • Plus 77 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1R 1,041.27
2 - 4R 1,015.24
5 - 9R 984.78
10 - 14R 945.39
15 +R 907.57

*price indicative

RS stock no.:
125-8042
Distrelec Article No.:
302-53-371
Mfr. Part No.:
IXFN360N15T2
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.07kW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

715nC

Maximum Operating Temperature

175°C

Height

9.6mm

Standards/Approvals

No

Length

38.23mm

Width

25.07 mm

Distrelec Product Id

30253371

Automotive Standard

No

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links