IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

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Subtotal (1 unit)*

R 809,06

(exc. VAT)

R 930,42

(inc. VAT)

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Per unit
1 - 1R 809.06
2 - 4R 788.83
5 - 9R 765.17
10 - 14R 734.56
15 +R 705.18

*price indicative

RS stock no.:
125-8042
Distrelec Article No.:
302-53-371
Mfr. Part No.:
IXFN360N15T2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

715nC

Maximum Power Dissipation Pd

1.07kW

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
PH

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