Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220SIS TK8A60W5,S5VX(M
- RS stock no.:
- 125-0596P
- Mfr. Part No.:
- TK8A60W5,S5VX(M
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied in a tube)*
R 765,25
(exc. VAT)
R 880,05
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 50 - 90 | R 15.305 |
| 100 - 240 | R 14.846 |
| 250 - 490 | R 14.252 |
| 500 + | R 13.682 |
*price indicative
- RS stock no.:
- 125-0596P
- Mfr. Part No.:
- TK8A60W5,S5VX(M
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | DTMOSIV | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 540 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 30 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.5mm | |
| Transistor Material | Si | |
| Height | 15mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 600 V | ||
Series DTMOSIV | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 540 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 30 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.5mm | ||
Transistor Material Si | ||
Height 15mm | ||
Forward Diode Voltage 1.7V | ||
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