Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220SIS TK8A60W5,S5VX(M

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Subtotal 50 units (supplied in a tube)*

R 765,25

(exc. VAT)

R 880,05

(inc. VAT)

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Units
Per unit
50 - 90R 15.305
100 - 240R 14.846
250 - 490R 14.252
500 +R 13.682

*price indicative

Packaging Options:
RS stock no.:
125-0596P
Mfr. Part No.:
TK8A60W5,S5VX(M
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

22 nC @ 10 V

Length

10mm

Width

4.5mm

Number of Elements per Chip

1

Height

15mm

Forward Diode Voltage

1.7V

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