Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 TK25N60X,S1F(S

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Subtotal 10 units (supplied in a tube)*

R 486,00

(exc. VAT)

R 558,90

(inc. VAT)

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Units
Per unit
10 - 18R 48.60
20 - 48R 47.14
50 - 98R 45.255
100 +R 43.445

*price indicative

Packaging Options:
RS stock no.:
125-0557P
Mfr. Part No.:
TK25N60X,S1F(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

180 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Width

5.02mm

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

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