Toshiba DTMOSIV N-Channel MOSFET, 7 A, 600 V, 3-Pin IPAK TK7Q60W,S1VQ(S

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Subtotal 10 units (supplied in a tube)*

R 97,23

(exc. VAT)

R 111,81

(inc. VAT)

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Units
Per unit
10 +R 9.723

*price indicative

Packaging Options:
RS stock no.:
125-0594P
Mfr. Part No.:
TK7Q60W,S1VQ(S
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

60 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

2.3mm

Length

6.65mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

7.12mm

Forward Diode Voltage

1.7V

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