Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF

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Subtotal (1 tube of 50 units)*

R 2 504,95

(exc. VAT)

R 2 880,70

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50R 50.099R 2,504.95
100 - 200R 48.846R 2,442.30
250 - 450R 47.381R 2,369.05
500 - 950R 45.486R 2,274.30
1000 +R 43.666R 2,183.30

*price indicative

RS stock no.:
124-9025
Mfr. Part No.:
IRLB3036PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

270A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

91nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

380W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
MX

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