Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-220 IRLB3036PBF
- RS stock no.:
- 124-9025
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 504,95
(exc. VAT)
R 2 880,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 550 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 50.099 | R 2,504.95 |
| 100 - 200 | R 48.846 | R 2,442.30 |
| 250 - 450 | R 47.381 | R 2,369.05 |
| 500 - 950 | R 45.486 | R 2,274.30 |
| 1000 + | R 43.666 | R 2,183.30 |
*price indicative
- RS stock no.:
- 124-9025
- Mfr. Part No.:
- IRLB3036PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 380W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 380W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRLB3036PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET N-Channel MOSFET 60 V D2PAK IRFS3006TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK IRLS3036TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V TO-262 IRF2804STRLPBF
- Infineon HEXFET Silicon N-Channel MOSFET 60 V, 3-Pin TO-247 IRFP3006PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFZ44VPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3206PBF
