Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-263 IRLS3034TRLPBF
- RS stock no.:
- 130-1025
- Mfr. Part No.:
- IRLS3034TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 120,07
(exc. VAT)
R 138,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 22 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 60.035 | R 120.07 |
| 10 - 98 | R 58.535 | R 117.07 |
| 100 - 498 | R 56.78 | R 113.56 |
| 500 - 998 | R 54.51 | R 109.02 |
| 1000 + | R 52.33 | R 104.66 |
*price indicative
- RS stock no.:
- 130-1025
- Mfr. Part No.:
- IRLS3034TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 343A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 343A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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