Infineon HEXFET N-Channel MOSFET, 44 A, 250 V, 3-Pin TO-247AC IRFP4229PBF
- RS stock no.:
- 124-9015
- Mfr. Part No.:
- IRFP4229PBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 25 units)**
R 1 430 80
(exc. VAT)
R 1 645 42
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit | Per Tube** |
---|---|---|
25 - 25 | R 57,232 | R 1 430,80 |
50 - 100 | R 55,802 | R 1 395,05 |
125 - 225 | R 54,128 | R 1 353,20 |
250 - 475 | R 51,962 | R 1 299,05 |
500 + | R 49,884 | R 1 247,10 |
**price indicative
- RS stock no.:
- 124-9015
- Mfr. Part No.:
- IRFP4229PBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 44 A | |
Maximum Drain Source Voltage | 250 V | |
Package Type | TO-247AC | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 46 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 310 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +175 °C | |
Width | 5.3mm | |
Typical Gate Charge @ Vgs | 72 nC @ 10 V | |
Length | 15.9mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Height | 20.3mm | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 46 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.3mm | ||
Typical Gate Charge @ Vgs 72 nC @ 10 V | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 20.3mm | ||
Minimum Operating Temperature -40 °C | ||
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