N-Channel MOSFET, 44 A, 250 V, 3-Pin TO-247AC Infineon IRFP4229PBF
- RS stock no.:
- 124-9015
- Mfr. Part No.:
- IRFP4229PBF
- Manufacturer:
- Infineon
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275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (In a Tube of 25)
R 97.376
(exc. VAT)
R 111.982
(inc. VAT)
| units | Per unit | Per Tube* |
| 25 - 25 | R 97.376 | R 2,434.40 |
| 50 - 100 | R 94.942 | R 2,373.55 |
| 125 - 225 | R 92.094 | R 2,302.35 |
| 250 - 475 | R 88.41 | R 2,210.25 |
| 500 + | R 84.874 | R 2,121.85 |
| *price indicative | ||
- RS stock no.:
- 124-9015
- Mfr. Part No.:
- IRFP4229PBF
- Manufacturer:
- Infineon
- COO (Country of Origin):
- MX
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specification
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 44 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 46 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 310 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Length | 15.9mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 5.3mm |
| Maximum Operating Temperature | +175 °C |
| Series | HEXFET |
| Height | 20.3mm |
| Minimum Operating Temperature | -40 °C |
275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Price (Excl VAT) Each (In a Tube of 25)
R 97.376
(exc. VAT)
R 111.982
(inc. VAT)
| units | Per unit | Per Tube* |
| 25 - 25 | R 97.376 | R 2,434.40 |
| 50 - 100 | R 94.942 | R 2,373.55 |
| 125 - 225 | R 92.094 | R 2,302.35 |
| 250 - 475 | R 88.41 | R 2,210.25 |
| 500 + | R 84.874 | R 2,121.85 |
| *price indicative | ||