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    N-Channel MOSFET, 44 A, 250 V, 3-Pin TO-247AC Infineon IRFP4229PBF

    RS stock no.:
    124-9015
    Mfr. Part No.:
    IRFP4229PBF
    Manufacturer:
    Infineon
    Infineon

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    275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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    units

    Not Available for premium delivery

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    Price (Excl VAT) Each (In a Tube of 25)

    R 97.376

    (exc. VAT)

    R 111.982

    (inc. VAT)

    unitsPer unitPer Tube*
    25 - 25R 97.376R 2,434.40
    50 - 100R 94.942R 2,373.55
    125 - 225R 92.094R 2,302.35
    250 - 475R 88.41R 2,210.25
    500 +R 84.874R 2,121.85
    *price indicative
    RS stock no.:
    124-9015
    Mfr. Part No.:
    IRFP4229PBF
    Manufacturer:
    Infineon
    COO (Country of Origin):
    MX

    Legislation and Compliance

    COO (Country of Origin):
    MX

    Product Details

    Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


    Motor Control MOSFET


    Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

    Synchronous Rectifier MOSFET


    A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current44 A
    Maximum Drain Source Voltage250 V
    Package TypeTO-247AC
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance46 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage5V
    Minimum Gate Threshold Voltage3V
    Maximum Power Dissipation310 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Typical Gate Charge @ Vgs72 nC @ 10 V
    Length15.9mm
    Transistor MaterialSi
    Number of Elements per Chip1
    Width5.3mm
    Maximum Operating Temperature+175 °C
    SeriesHEXFET
    Height20.3mm
    Minimum Operating Temperature-40 °C
    275 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (In a Tube of 25)

    R 97.376

    (exc. VAT)

    R 111.982

    (inc. VAT)

    unitsPer unitPer Tube*
    25 - 25R 97.376R 2,434.40
    50 - 100R 94.942R 2,373.55
    125 - 225R 92.094R 2,302.35
    250 - 475R 88.41R 2,210.25
    500 +R 84.874R 2,121.85
    *price indicative