N-Channel MOSFET, 44 A, 55 V, 3-Pin DPAK Infineon IRFR1205TRPBF

RS stock no.:: 165-5832
Mfr. Part No.:: IRFR1205TRPBF
Manufacturer:: Infineon

N-Channel MOSFET, 44 A, 55 V, 3-Pin DPAK Infineon IRFR1205TRPBF

Image representative of range

Subtotal (1 reel of 2000 units)**

R 18 418 00

(exc. VAT)

R 21 180 00

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Reel**
2000 +	R 9,209	R 18 418,00

**price indicative

RS stock no.:: 165-5832
Mfr. Part No.:: IRFR1205TRPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 44A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFR1205TRPBF

This high-performance N-channel MOSFET is designed for efficient power management in a variety of applications. It features a maximum continuous drain current of 44A and a maximum drain-source voltage of 55V, making it suitable for professionals in the electronics and automation sectors. The enhancement mode configuration enhances switching efficiency, thereby improving circuit performance.

Features & Benefits

• Low drain-source resistance minimises power loss
• Handles power dissipation up to 107W
• High maximum operating temperature of 175°C for broad applicability
• Optimised gate charge for improved switching efficiency
• Surface-mount design simplifies integration into compact circuits
• Lead-free construction complies with contemporary environmental standards

Applications

• Utilised in power converters to improve efficiency
• Employed in motor control circuits for precise functionality
• Ideal for switching regulators to manage voltage
• Suitable for renewable energy systems
• Appropriate for compact portable electronics

What is the significance of the low on-resistance in this model?

The low on-resistance reduces heat generation during operation, enhancing efficiency and reliability in high-current applications.

How does the enhancement mode configuration benefit circuit design?

The enhancement mode provides better control over switching characteristics, ensuring smooth operation and optimal performance in various electronic applications.

Can this component operate in extreme temperatures?

Yes, it is rated for use in environments from -55°C to +175°C, making it appropriate for various industrial applications.

What are the electrical implications of the gate-source voltage limits?

The gate-source voltage limits ensure safe operation and prevent damage, allowing design flexibility without sacrificing reliability.

How can effective heat dissipation be achieved when using this component?

Incorporating adequate heatsinking or ventilation will facilitate effective heat dissipation, ensuring stable performance during prolonged operation periods.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	44 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	107 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.22mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	65 nC @ 10 V
Length	6.73mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	2.39mm