Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

R 1 197,55

(exc. VAT)

R 1 377,175

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 75 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
25 - 25R 47.902R 1,197.55
50 - 100R 46.704R 1,167.60
125 - 225R 45.303R 1,132.58
250 - 475R 43.491R 1,087.28
500 +R 41.751R 1,043.78

*price indicative

RS stock no.:
124-9012
Mfr. Part No.:
IRFP3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

280W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

120nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.87mm

Width

5.31 mm

Height

20.7mm

Automotive Standard

No

COO (Country of Origin):
MX

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