Infineon HEXFET Type N-Channel MOSFET, 200 A, 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF

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Subtotal (1 pack of 2 units)*

R 119,14

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R 137,02

(inc. VAT)

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Per Pack*
2 - 8R 59.57R 119.14
10 - 18R 58.08R 116.16
20 - 38R 56.34R 112.68
40 - 98R 54.085R 108.17
100 +R 51.92R 103.84

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Packaging Options:
RS stock no.:
688-6989
Mfr. Part No.:
IRFP3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

280W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.7mm

Length

15.87mm

Width

5.31 mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-35-445

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