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Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

RS stock no.:: 217-2594
Mfr. Part No.:: IRF200P223
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

Image representative of range

Bulk discount available

Subtotal (1 tube of 25 units)*

R 1 852,725

(exc. VAT)

R 2 130,625

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 1,100 unit(s), ready to ship from another location

Units	Per unit	Per Tube*
25 - 50	R 74.109	R 1,852.73
75 - 100	R 72.256	R 1,806.40
125 +	R 70.088	R 1,752.20

*price indicative

RS stock no.:: 217-2594
Mfr. Part No.:: IRF200P223
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	11.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	313W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	55nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.87mm
	Width	5.31 mm
	Height	34.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 11.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 313W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 55nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.87mm
	Width 5.31 mm
	Height 34.9mm
	Automotive Standard No

Datasheet - IRF200P223

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

FREE delivery for orders over R 1,500.00

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