Infineon HEXFET N-Channel MOSFET, 60 A, 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF
- RS stock no.:
- 124-8961
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
R 3 278,80
(exc. VAT)
R 3 770,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,200 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 65.576 | R 3,278.80 |
| 100 - 200 | R 63.937 | R 3,196.85 |
| 250 - 450 | R 62.019 | R 3,100.95 |
| 500 - 950 | R 59.538 | R 2,976.90 |
| 1000 + | R 57.156 | R 2,857.80 |
*price indicative
- RS stock no.:
- 124-8961
- Mfr. Part No.:
- IRFB4332PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 390W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 390W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.82mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 60A Maximum Continuous Drain Current, 390W Maximum Power Dissipation - IRFB4332PBF
This MOSFET is tailored for high-performance applications in automation and electronics. Leveraging Advanced HEXFET technology, it ensures optimal efficiency and reliability in critical environments. The device features robust specifications combined with a user-friendly design, making it suitable for a range of industrial applications. Its effective operation in rigorous conditions meets the requirements of modern electronic systems.
Features & Benefits
• N-channel configuration supports efficient current flow
• Continuous drain current rating of 60A facilitates strong performance
• High voltage capacity up to 250V enhances versatility
• Low on-resistance increases efficiency and minimises heat generation
• Enhancement mode operation improves stability for digital applications
• High power dissipation capability contributes to reliability under load
Applications
• Applied in energy recovery systems to boost efficiency
• Suitable for pass switch where space is limited
• Utilised in plasma display panels to enhance performance
• Ideal for automation controls demanding sustained high current
What is the temperature range for optimal operation?
The device operates effectively between -40°C and +175°C, allowing it to function in diverse environmental conditions.
How does the gate threshold voltage affect performance?
With a threshold voltage between 3V and 5V, it permits precise control in switching applications.
Can it handle high pulsed currents?
Yes, the design accommodates pulsed drain currents, allowing for 230A under specific conditions, which is advantageous for transient applications.
What are the thermal management requirements?
To maintain optimal performance, adequate cooling measures should be implemented, considering a maximum power dissipation of 390W.
Is it compatible with various mounting configurations?
The TO-220AB package allows for straightforward through-hole mounting, enhancing compatibility across multiple circuit designs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IRFB4332PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220