Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 25 units)*
R 714,90
(exc. VAT)
R 822,125
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 650 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | R 28.596 | R 714.90 |
| 50 - 100 | R 27.881 | R 697.03 |
| 125 - 225 | R 27.044 | R 676.10 |
| 250 - 475 | R 25.963 | R 649.08 |
| 500 + | R 24.924 | R 623.10 |
*price indicative
- RS stock no.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP260MPBF
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- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247