Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247 IRFP260MPBF
- RS stock no.:
- 827-4013
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 246,70
(exc. VAT)
R 283,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 35 unit(s) ready to ship from another location
- Plus 770 unit(s) shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 49.34 | R 246.70 |
| 50 - 95 | R 48.106 | R 240.53 |
| 100 - 245 | R 46.662 | R 233.31 |
| 250 - 495 | R 44.796 | R 223.98 |
| 500 + | R 43.004 | R 215.02 |
*price indicative
- RS stock no.:
- 827-4013
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.2 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP260MPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP260NPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250MPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP250NPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP90N20DPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP4227PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin TO-247AC IRFP4668PBF
- Infineon HEXFET N-Channel MOSFET 300 V, 3-Pin TO-247AC IRF300P227