Nexperia PHT6NQ10T Type N-Channel MOSFET, 3 A, 100 V Enhancement, 4-Pin SC-73
- RS stock no.:
- 124-2386
- Mfr. Part No.:
- PHT6NQ10T,135
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 reel of 4000 units)*
R 30 232,00
(exc. VAT)
R 34 768,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | R 7.558 | R 30,232.00 |
| 8000 - 16000 | R 7.369 | R 29,476.00 |
| 20000 - 36000 | R 7.148 | R 28,592.00 |
| 40000 + | R 6.862 | R 27,448.00 |
*price indicative
- RS stock no.:
- 124-2386
- Mfr. Part No.:
- PHT6NQ10T,135
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-73 | |
| Series | PHT6NQ10T | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.7mm | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-73 | ||
Series PHT6NQ10T | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.7mm | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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