Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 2N7002BKS,115
- RS stock no.:
- 781-6701
- Mfr. Part No.:
- 2N7002BKS,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 240,65
(exc. VAT)
R 276,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 700 unit(s) shipping from 29 December 2025
- Plus 5,850 unit(s) shipping from 13 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 4.813 | R 240.65 |
| 100 - 200 | R 4.692 | R 234.60 |
| 250 - 450 | R 4.552 | R 227.60 |
| 500 - 2950 | R 4.37 | R 218.50 |
| 3000 + | R 4.195 | R 209.75 |
*price indicative
- RS stock no.:
- 781-6701
- Mfr. Part No.:
- 2N7002BKS,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 445mW | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 445mW | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Dual N-Channel MOSFET 60 V115
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 NTJD5121NT1G
- Toshiba Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 SSM6N7002KFU
- Infineon OptiMOS™ Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DWH6327XTSA1
- Nexperia Dual N-Channel MOSFET 60 V115
- Nexperia Dual N-Channel MOSFET 30 V115
- Nexperia Dual N-Channel MOSFET 20 V115
- Nexperia Dual N-Channel MOSFET 20 V115
