Nexperia 2N7002PW Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin SC-70
- RS stock no.:
- 103-8094
- Mfr. Part No.:
- 2N7002PW,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 1 734,00
(exc. VAT)
R 1 995,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 318,000 unit(s) shipping from 11 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 0.578 | R 1,734.00 |
| 6000 - 12000 | R 0.563 | R 1,689.00 |
| 15000 - 27000 | R 0.546 | R 1,638.00 |
| 30000 - 57000 | R 0.524 | R 1,572.00 |
| 60000 + | R 0.503 | R 1,509.00 |
*price indicative
- RS stock no.:
- 103-8094
- Mfr. Part No.:
- 2N7002PW,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7002PW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 260mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7002PW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 260mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
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