Nexperia BSH108 Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 124-2287
- Mfr. Part No.:
- BSH108,215
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 5 103,00
(exc. VAT)
R 5 868,00
(inc. VAT)
Add 3000 units to get free delivery
Temporarily out of stock
- 3,000 unit(s) shipping from 27 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.701 | R 5,103.00 |
| 6000 - 12000 | R 1.659 | R 4,977.00 |
| 15000 - 27000 | R 1.609 | R 4,827.00 |
| 30000 - 57000 | R 1.545 | R 4,635.00 |
| 60000 + | R 1.483 | R 4,449.00 |
*price indicative
- RS stock no.:
- 124-2287
- Mfr. Part No.:
- BSH108,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSH108 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 830mW | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSH108 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 830mW | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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