DiodesZetex ZXMN10A08E6 Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-23
- RS stock no.:
- 922-8033
- Mfr. Part No.:
- ZXMN10A08E6TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 18 198,00
(exc. VAT)
R 20 928,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 6.066 | R 18,198.00 |
| 6000 - 9000 | R 5.914 | R 17,742.00 |
| 12000 - 27000 | R 5.737 | R 17,211.00 |
| 30000 + | R 5.507 | R 16,521.00 |
*price indicative
- RS stock no.:
- 922-8033
- Mfr. Part No.:
- ZXMN10A08E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | ZXMN10A08E6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Forward Voltage Vf | 0.87V | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series ZXMN10A08E6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Forward Voltage Vf 0.87V | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZXMN10A08E6 Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-23 ZXMN10A08E6TA
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-23 ZXMN10B08E6TA
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- onsemi FDN357N Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 FDN357N
- Nexperia BSH108 Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia BSH108 Type N-Channel MOSFET 30 V Enhancement215
- Nexperia PMV213SN Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23