Vishay E Type N-Channel MOSFET, 12 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- RS stock no.:
- 210-4990
- Mfr. Part No.:
- SIHH240N60E-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 192,80
(exc. VAT)
R 221,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,945 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 38.56 | R 192.80 |
| 10 - 95 | R 37.596 | R 187.98 |
| 100 - 245 | R 36.468 | R 182.34 |
| 250 - 495 | R 35.01 | R 175.05 |
| 500 + | R 33.61 | R 168.05 |
*price indicative
- RS stock no.:
- 210-4990
- Mfr. Part No.:
- SIHH240N60E-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 208mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 7.9 mm | |
| Length | 7.9mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 8 x 8 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 208mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 7.9 mm | ||
Length 7.9mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has PowerPAK 8 x 8 package type with single configuration.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
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