onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 124-1693
- Mfr. Part No.:
- BSS123
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionSubtotal (1 reel of 3000 units)*
R 3 501,00
(exc. VAT)
R 4 026,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 24,000 unit(s) shipping from 01 June 2026
- Plus 6,000 unit(s) shipping from 20 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | R 1.167 | R 3,501.00 |
| 9000 - 12000 | R 1.137 | R 3,411.00 |
| 15000 - 27000 | R 1.103 | R 3,309.00 |
| 30000 - 57000 | R 1.059 | R 3,177.00 |
| 60000 + | R 1.017 | R 3,051.00 |
*price indicative
- RS stock no.:
- 124-1693
- Mfr. Part No.:
- BSS123
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.92mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.92mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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