DiodesZetex DMN Type N-Channel MOSFET, 15.4 A, 30 V Enhancement, 4-Pin SOT-223
- RS stock no.:
- 122-3318
- Mfr. Part No.:
- DMN3032LE-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 9 557,50
(exc. VAT)
R 10 990,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 10,000 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 3.823 | R 9,557.50 |
| 5000 - 7500 | R 3.728 | R 9,320.00 |
| 10000 - 22500 | R 3.616 | R 9,040.00 |
| 25000 - 47500 | R 3.471 | R 8,677.50 |
| 50000 + | R 3.332 | R 8,330.00 |
*price indicative
- RS stock no.:
- 122-3318
- Mfr. Part No.:
- DMN3032LE-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-223 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.3nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Length | 6.55mm | |
| Width | 3.55 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-223 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.3nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Length 6.55mm | ||
Width 3.55 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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