DiodesZetex DMN6068SE Type N-Channel MOSFET, 5.6 A, 60 V Enhancement, 4-Pin SOT-223 DMN6068SE-13
- RS stock no.:
- 751-4219
- Mfr. Part No.:
- DMN6068SE-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 214,50
(exc. VAT)
R 246,75
(inc. VAT)
Add 200 units to get free delivery
In Stock
- Plus 3,050 unit(s) shipping from 16 February 2026
- Plus 9,450 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 8.58 | R 214.50 |
| 125 - 475 | R 8.366 | R 209.15 |
| 500 - 1975 | R 8.115 | R 202.88 |
| 2000 - 3975 | R 7.79 | R 194.75 |
| 4000 + | R 7.479 | R 186.98 |
*price indicative
- RS stock no.:
- 751-4219
- Mfr. Part No.:
- DMN6068SE-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN6068SE | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.7W | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Forward Voltage Vf | 1.15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN6068SE | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.7W | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Forward Voltage Vf 1.15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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