DiodesZetex BSS127 Type N-Channel MOSFET, 70 mA, 600 V Enhancement, 3-Pin SC-59
- RS stock no.:
- 122-2848
- Mfr. Part No.:
- BSS127SSN-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 4 995,00
(exc. VAT)
R 5 745,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.665 | R 4,995.00 |
| 6000 - 9000 | R 1.623 | R 4,869.00 |
| 12000 - 27000 | R 1.574 | R 4,722.00 |
| 30000 - 57000 | R 1.511 | R 4,533.00 |
| 60000 + | R 1.451 | R 4,353.00 |
*price indicative
- RS stock no.:
- 122-2848
- Mfr. Part No.:
- BSS127SSN-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSS127 | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 1.08nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Length | 3.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSS127 | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 1.08nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Length 3.1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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