DiodesZetex DMN Type N-Channel MOSFET, 11 A, 12 V Enhancement, 3-Pin SC-59 DMN1019USN-7
- RS stock no.:
- 921-1032
- Mfr. Part No.:
- DMN1019USN-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 258,85
(exc. VAT)
R 297,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,850 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 5.177 | R 258.85 |
| 250 - 950 | R 5.047 | R 252.35 |
| 1000 - 1950 | R 4.896 | R 244.80 |
| 2000 - 2950 | R 4.70 | R 235.00 |
| 3000 + | R 4.512 | R 225.60 |
*price indicative
- RS stock no.:
- 921-1032
- Mfr. Part No.:
- DMN1019USN-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-59 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-59 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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