DiodesZetex DMN Type N-Channel MOSFET, 11 A, 12 V Enhancement, 3-Pin SC-59 DMN1019USNQ-7
- RS stock no.:
- 244-1912
- Mfr. Part No.:
- DMN1019USNQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 187,225
(exc. VAT)
R 215,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,675 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.489 | R 187.23 |
| 50 - 75 | R 7.302 | R 182.55 |
| 100 - 225 | R 7.083 | R 177.08 |
| 250 - 975 | R 6.80 | R 170.00 |
| 1000 + | R 6.528 | R 163.20 |
*price indicative
- RS stock no.:
- 244-1912
- Mfr. Part No.:
- DMN1019USNQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.2W | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switch, dc to dc Converters, power management functions.
Low on resistance
ESD Protected gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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