DiodesZetex BSS127S Type N-Channel MOSFET, 70 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127S-7
- RS stock no.:
- 822-2172
- Mfr. Part No.:
- BSS127S-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 206,70
(exc. VAT)
R 237,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
- Plus 8,400 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 4.134 | R 206.70 |
| 250 - 450 | R 4.031 | R 201.55 |
| 500 - 1450 | R 3.91 | R 195.50 |
| 1500 - 2950 | R 3.754 | R 187.70 |
| 3000 + | R 3.603 | R 180.15 |
*price indicative
- RS stock no.:
- 822-2172
- Mfr. Part No.:
- BSS127S-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSS127S | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.08nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSS127S | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.08nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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