Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS stock no.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

Image representative of range

Bulk discount available

Price (Excl VAT) Each (On a Reel of 3000)

R 5,947

(exc. VAT)

R 6,839

(inc. VAT)

On back order for despatch 2025/03/06*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Reel**
3000 - 3000	R 5,947	R 17 841,00
6000 - 9000	R 5,799	R 17 397,00
12000 - 27000	R 5,625	R 16 875,00
30000 +	R 5,40	R 16 200,00

**price indicative

RS stock no.:: 121-6306
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Transistor Material	Si
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Length	2mm
Maximum Operating Temperature	+150 °C
Width	2mm
Minimum Operating Temperature	-55 °C
Height	0.75mm

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

Dual N/P-Channel MOSFET, ON Semiconductor

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