Vishay MaxSiC N channel-Channel MOSFET, 31 A, 1200 V N, 4-Pin TO-247AD MXPQ120A080SL-GE3

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R 184,74

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R 212,45

(inc. VAT)

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1 - 4R 184.74
5 +R 180.12

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RS stock no.:
790-417
Mfr. Part No.:
MXPQ120A080SL-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247AD

Series

MaxSiC

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

61nC

Maximum Gate Source Voltage Vgs

22V

Maximum Power Dissipation Pd

174W

Forward Voltage Vf

4.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

16.13mm

Standards/Approvals

RoHS

Height

5.21mm

Length

23.6mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay High performance N-Channel SiC MOSFET designed for efficient power switching applications, ensuring optimal performance and reliability in your systems.

Fast switching speed enhances overall system efficiency

Short circuit withstand time of 3 μs provides robust protection

AEC-Q101 qualified for automotive applications ensures reliability

Low on-state resistance minimises power loss during operation

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