Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- RS stock no.:
- 790-413
- Mfr. Part No.:
- MXP120A080SE-T1GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 162,51
(exc. VAT)
R 186,89
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 162.51 |
| 10 - 49 | R 158.45 |
| 50 - 99 | R 153.70 |
| 100 + | R 147.55 |
*price indicative
- RS stock no.:
- 790-413
- Mfr. Part No.:
- MXP120A080SE-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Power Dissipation Pd | 185W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.28mm | |
| Length | 9.23mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 4.7V | ||
Maximum Power Dissipation Pd 185W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 175°C | ||
Width 10.28mm | ||
Length 9.23mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs improves reliability
Gate-source voltage of -10 to +22 V allows flexible operation
Continuous drain current of 32 A ensures effective functionality
Related links
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 7-Pin TO-263-7L MXPQ120A045SE-1GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXP120A063SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXPQ120A063SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXPQ120A080SL-GE3
- Vishay MaxSiC N channel-Channel MOSFET 1200 V N, 4-Pin TO-247AD MXP120A080SL-GE3
- Vishay MXP N channel-Channel Power Semiconductor 1200 V N, 7-Pin TO-263-7L MXP120A045SE-T1GE3
- Vishay SUM Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263-7L SUM70042M-GE3
