Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3

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R 162,51

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R 186,89

(inc. VAT)

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Units
Per unit
1 - 9R 162.51
10 - 49R 158.45
50 - 99R 153.70
100 +R 147.55

*price indicative

RS stock no.:
790-413
Mfr. Part No.:
MXP120A080SE-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

1200V

Series

MaxSiC

Package Type

TO-263-7L

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

22V

Forward Voltage Vf

4.7V

Maximum Power Dissipation Pd

185W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

47nC

Maximum Operating Temperature

175°C

Width

10.28mm

Length

9.23mm

Height

4.5mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.

Fast switching speed enhances overall system performance

Short circuit withstand time of 3 μs improves reliability

Gate-source voltage of -10 to +22 V allows flexible operation

Continuous drain current of 32 A ensures effective functionality

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