Vishay MaxSiC N channel-Channel MOSFET, 41 A, 1200 V N, 7-Pin TO-263-7L MXP120A063SE-T1GE3
- RS stock no.:
- 790-412
- Mfr. Part No.:
- MXP120A063SE-T1GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 unit)*
R 179,75
(exc. VAT)
R 206,71
(inc. VAT)
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- Shipping from 06 January 2027
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Units | Per unit |
|---|---|
| 1 - 4 | R 179.75 |
| 5 + | R 175.26 |
*price indicative
- RS stock no.:
- 790-412
- Mfr. Part No.:
- MXP120A063SE-T1GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 41A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | MaxSiC | |
| Package Type | TO-263-7L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 221W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Length | 9.23mm | |
| Width | 10.28mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 41A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series MaxSiC | ||
Package Type TO-263-7L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 221W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Length 9.23mm | ||
Width 10.28mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel SiC MOSFET is designed for efficient power management in demanding applications. It excels in its Ability to handle high voltages and ensure reliable operation.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs ensures reliability during faults
Operating voltage range for gate-source control optimises flexibility
Continuous drain current capability supports robust energy transfer
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