Vishay TrenchFET N channel-Channel MOSFET, 85 A, 12 V Enhancement, 8-Pin PowerPAK 1212 SISF12EDN-T1-GE3

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Subtotal (1 unit)*

R 11,63

(exc. VAT)

R 13,37

(inc. VAT)

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Units
Per unit
1 - 24R 11.63
25 - 99R 7.68
100 +R 3.95

*price indicative

RS stock no.:
735-237
Mfr. Part No.:
SISF12EDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

69.4W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±8 V

Typical Gate Charge Qg @ Vgs

45.5nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS Compliant

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

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