STMicroelectronics STH N channel-Channel Power MOSFET, 397 A, 60 V Enhancement, 2-Pin H2PAK-2 STH345N6F7-2

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R 56,62

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R 65,11

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1 - 9R 56.62
10 - 24R 55.20
25 - 99R 53.54
100 - 499R 51.40
500 +R 49.34

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RS stock no.:
719-652
Mfr. Part No.:
STH345N6F7-2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

397A

Maximum Drain Source Voltage Vds

60V

Package Type

H2PAK-2

Series

STH

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

341W

Maximum Operating Temperature

175°C

Height

4.7mm

Length

9.3mm

Width

10.4 mm

COO (Country of Origin):
CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.

Among the lowest RDS(on) on the market

Excellent FoM (figure of merit)

Low Crss/Ciss ratio for EMI immunity

High avalanche ruggedness

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