STMicroelectronics STH Type N-Channel MOSFET, 55 A, 30 V Enhancement, 7-Pin HU3PAK STHU32N65DM6AG
- RS stock no.:
- 240-0609
- Mfr. Part No.:
- STHU32N65DM6AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 141,02
(exc. VAT)
R 162,17
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 141.02 |
| 10 - 99 | R 137.49 |
| 100 - 249 | R 133.37 |
| 250 - 499 | R 128.04 |
| 500 + | R 122.92 |
*price indicative
- RS stock no.:
- 240-0609
- Mfr. Part No.:
- STHU32N65DM6AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HU3PAK | |
| Series | STH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52.6nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HU3PAK | ||
Series STH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52.6nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely dv/dt ruggedness
Zener-protected
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