STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4
- RS stock no.:
- 719-650
- Mfr. Part No.:
- STD70N10F4
- Manufacturer:
- STMicroelectronics
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R 18,95
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R 21,79
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 24 | R 18.95 |
| 25 - 99 | R 18.48 |
| 100 - 499 | R 17.93 |
| 500 + | R 17.21 |
*price indicative
- RS stock no.:
- 719-650
- Mfr. Part No.:
- STD70N10F4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STP | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 0.0195Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.6mm | |
| Length | 6.2mm | |
| Height | 2.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STP | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 0.0195Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.6mm | ||
Length 6.2mm | ||
Height 2.4mm | ||
The STMicroelectronics STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.
Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
100% avalanche tested
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