ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

RS stock no.:: 687-463
Mfr. Part No.:: RH7G04CBJFRATCB
Manufacturer:: ROHM

ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

Image representative of range

Bulk discount available

Subtotal (1 tape of 2 units)*

R 36,82

(exc. VAT)

R 42,34

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

100 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 18.41	R 36.82
20 - 48	R 17.95	R 35.90
50 - 198	R 17.41	R 34.82
200 - 998	R 16.715	R 33.43
1000 +	R 16.045	R 32.09

*price indicative

RS stock no.:: 687-463
Mfr. Part No.:: RH7G04CBJFRATCB
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-40V
	Series	RH7G04CBJFRA
	Package Type	DFN3333T8LSAB
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	17.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	62W
	Maximum Gate Source Voltage Vgs	5 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Length	3.4mm
	Standards/Approvals	RoHS
	Width	3.4 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -40V
	Series RH7G04CBJFRA
	Package Type DFN3333T8LSAB
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 17.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 62W
	Maximum Gate Source Voltage Vgs 5 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Length 3.4mm
	Standards/Approvals RoHS
	Width 3.4 mm
	Automotive Standard AEC-Q101

Datasheet - RH7G04CBJFRATCB

COO (Country of Origin):: JP

The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.

Features a low on-state resistance of 17.7mΩ for improved efficiency

Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications

Utilises wettable flanks for enhanced solder joint reliability

Offers robust thermal resistance to maintain performance under heavy loads

Operates effectively across a wide temperature range of -55 to +175°C

Includes a 100% avalanche test specification for increased safety

Employed in a variety of applications including ADAS and automotive lighting

Comes with detailed packaging specifications for user-friendly integration

ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

FREE delivery for orders over R 1,500.00

Related links